SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING NITRIDE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

• Main Authors: SHIMIZU, TAKAYUKI, MORIOKA, SATORU, TAKAKUSAKI, MISAO
• Format: Patent
• Language: English; French; Japanese
• Published: 23.10.2008
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Disclosed is a technique for stabilizing characteristics of an NdGaO3 substrate which is used for epitaxial growth and growing a good-quality nitride compound semiconductor single crystal with good reproducibility. Specifically, an NdGaO3 single crystal grown by a crystal pulling method is subjected to an annealing process in the atmosphere at a temperature not less than 1400°C but not more than 1500°C for a certain time (for example, for 10 hours), and this annealed NdGaO3 substrate is used as a substrate for epitaxial growth. La présente invention concerne une technique destinée à stabiliser les caractéristiques d'un substrat en NdGaO3 qui sert à la croissance épitaxiale et à faire croître un monocristal de semi-conducteur à composé nitrure de bonne qualité ayant une bonne reproductibilité. En particulier, un monocristal de NdGaO3 obtenu par un procédé de tirage de cristal est soumis à un procédé de recuit dans l'atmosphère à une température n'étant pas inférieure à 1400 °C, mais pas supérieure à 1500 °C pendant une certaine durée (par exemple, pendant 10 heures), et ce substrat en NdGaO3 recuit sert de substrat pour une croissance épitaxiale.