SILICON OF PRISMATIC SHAPE AND PROCESS FOR PRODUCING THE SAME

• Main Authors: OOHIRA, FUMIKAZU, NAGAO, SHINYA, HASHIGUCHI, GEN
• Format: Patent
• Language: English; French; Japanese
• Published: 25.09.2008
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A process for producing a silicon of prismatic shape according to an utterly novel technological principle; and a silicon of prismatic shape with high aspect ratio obtained thereby. There are sequentially performed the alignment configuration forming step of using a silicon wafer with face (110), fo...