COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE

• Main Authors: BISCOTTO, MARK A, COOPER, EMANUEL I, YANDERS, KEVIN P, BOWERS, WILLIAM R, SONTHALIA, PRERNA, THOMAS, NICOLE E, KORZENSKI, MICHAEL B, SPARKS, EILEEN
• Format: Patent
• Language: English; French
• Published: 03.07.2008
• Subjects: ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; ADHESIVES; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; CONVEYING; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HANDLING THIN OR FILAMENTARY MATERIAL; HOLOGRAPHY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; MATERIALS THEREFOR; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; ORIGINALS THEREFOR; PACKAGES; PACKAGING ELEMENTS; PACKING; PAINTS; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; POLISHES; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES; STORING; TRANSPORTING

Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100 °C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min -1. L'invention concerne des compositions servant à l'élimination sélective de matériaux de nitrure de silicium par rapport au polysilicium, à des matériaux d'oxyde de silicium et/ou à des matériaux de siliciure, à partir d'un appareil microélectronique comportant des matériaux de nitrure de silicium à sa surface. Les compositions d'élimination contiennent de l'acide fluorosilicique, de l'acide silicique et au moins un solvant organique. Les températures de traitement typiques sont inférieures à environ 100 °C et la sélectivité typique pour la gravure nitrure contre oxyde est d'environ 200:1 à environ 2000:1. Dans des conditions de traitement typiques, des siliciures à base de nickel et des nitrures de titane et de tantale ne sont généralement pas affectés, et les vitesses de gravure de polysilicium sont inférieures à environ 1 Å min -1.