COMPOSITION FOR RESIST LOWER LAYER FILM FORMATION AND METHOD FOR PATTERN FORMATION

This invention provides a composition for resist lower layer film formation, which has excellent etching resistance and, in a dry etching process, is less likely to cause bending of a lower layer film pattern, and can transfer a resist pattern faithfully onto a substrate to be processed with high re...

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Bibliographic Details
Main Authors YOSHIMURA, NAKAATSU, KONNO, YOUSUKE
Format Patent
LanguageEnglish
French
Japanese
Published 29.05.2008
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:This invention provides a composition for resist lower layer film formation, which has excellent etching resistance and, in a dry etching process, is less likely to cause bending of a lower layer film pattern, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility. The composition for resist lower layer film formation comprises (A) an aminated fullerene comprising at least one amino group attached to a fullerene skeleton and (B) a solvent. L'invention concerne une composition de formation d'un film de couche inférieure de réserve. Cette composition présente une excellente résistance à la gravure et est moins susceptible, dans un processus de gravure à sec, d'entraîner une déformation d'un motif de film de couche inférieure. De plus, cette composition permet de transférer fidèlement un motif de réserve sur un substrat à traiter, avec une reproductibilité élevée. La composition selon l'invention contient (A) un fullerène aminé contenant au moins un groupe amino lié à un squelette fullerène et (B) un solvant.
Bibliography:Application Number: WO2007JP72704