PROCESS FOR PRODUCING GaN SINGLE-CRYSTAL, GaN THIN-FILM TEMPLATE SUBSTRATE AND GaN SINGLE-CRYSTAL GROWING APPARATUS

• Main Authors: SHIMIZU, TAKAYUKI, MORIOKA, SATORU, TAKAKUSAKI, MISAO
• Format: Patent
• Language: English; French; Japanese
• Published: 27.03.2008
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A process for producing a GaN single-crystal, in which even when use is made of a hydride vapor phase growing technique, the thickness of GaN single-crystal film can be controlled accurately; a GaN thin-film template substrate suitable for growth of a GaN thick film with good properties; and a relevant GaN single-crystal growing apparatus. There is provided a process for producing a GaN single-crystal according to a hydride vapor phase growing technique involving reacting GaCl (gallium chloride) formed by blowing HCl (hydrogen chloride) onto Ga (gallium) melted by heating at given temperature with NH3 (ammonia) gas being a hydride gas on a substrate to thereby form a GaN thin-film, which process comprises supplying the NH3 gas through a nozzle to the vicinity of the substrate (for example, position apart from the substrate by 0.7 to 4.0 times the diameter of the substrate). Further, a substrate of NGO(011) with lattice constants close to those of GaN is used as the substrate. L'invention concerne un procédé de fabrication d'un monocristal de GaN, dans lequel, même lorsque l'on utilise une technique de croissance en phase vapeur hybride, l'épaisseur du film de monocristal de GaN peut être contrôlée de façon précise ; un substrat de matrice de film mince de GaN approprié pour une croissance d'un film épais de GaN présentant de bonnes propriétés ; et un appareil correspondant de croissance de monocristal de GaN. L'invention concerne un procédé de fabrication d'un monocristal de GaN conformément à une technique de croissance en phase vapeur hybride, mettant en jeu la réaction de GaCl (chlorure de gallium) formée par l'insufflation de HCl(chlorure d'hydrogène) sur Ga (gallium) fondu par chauffage à une température donnée avec NH3 gazeux (ammoniac) qui est un gaz hybride sur un substrat, permettant ainsi de former un film mince de GaN. Ledit procédé comprend l'introduction du NH3 gazeux à travers une buse au voisinage du substrat (par exemple, en position éloignée du substrat de 0,7 à 4,0 fois le diamètre du substrat). En outre, un substrat de NGO(011) avec des constantes de réseau proches de celles de GaN est utilisé en tant que substrat.