AlxGayIn1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: UEMURA, TOMOKI, FUJIWARA, SHINSUKE, OKAHISA, TAKUJI, NISHIOKA, MUNEYUKI, HASHIMOTO, SHIN, UEMATSU, KOJI, OKUI, MANABU
• Format: Patent
• Language: English; French; Japanese
• Published: 21.06.2007
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

This invention provides an AlxGayIn1-x-yN crystal substrate (12) having a main plane (12m) having an area of not less than 10 cm2. The main plane (12m) has an outer area (12w) which is within 5 mm from the outer periphery and an inner area (12n) which is an area other than the outer area. The inner...