AlxGayIn1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: UEMURA, TOMOKI, FUJIWARA, SHINSUKE, OKAHISA, TAKUJI, NISHIOKA, MUNEYUKI, HASHIMOTO, SHIN, UEMATSU, KOJI, OKUI, MANABU
• Format: Patent
• Language: English; French; Japanese
• Published: 21.06.2007
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

This invention provides an AlxGayIn1-x-yN crystal substrate (12) having a main plane (12m) having an area of not less than 10 cm2. The main plane (12m) has an outer area (12w) which is within 5 mm from the outer periphery and an inner area (12n) which is an area other than the outer area. The inner area (12n) has a total dislocation density of not less than 1 × 102 cm-2 and not more than 1 × 106 cm-2. The above constitution can provide an AlxGayIn1-x-yN crystal substrate as a semiconductor device, which is large and has suitable dislocation density, a semiconductor device comprising the AlxGayIn1-x-yN crystal substrate, and a method for manufacturing the same. La présente invention concerne un substrat cristallin (12) à l'AlxGayIn1-x-yN comportant un plan principal (12m) dont l'aire est supérieure ou égale à 10 cm2. Le plan principal (12m) présente une aire extérieure (12w) qui est située dans une bande de 5 mm depuis la périphérie extérieure et une aire intérieure (12n) qui est une aire différente de l'aire extérieure. L'aire intérieure (12n) présente une densité de dislocation totale comprise entre 1 × 102 cm-2 et 1 × 106 cm-2. La constitution ci-dessus permet d'obtenir un substrat cristallin à l'AlxGayIn1-x-yN comme dispositif semi-conducteur, qui est large et présente une densité de dislocation adaptée, un dispositif semi-conducteur comprenant le substrat cristallin à l'AlxGayIn1-x-yN, et son procédé de fabrication.