METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
The method of the invention discloses a cheaper way of manufacturing a semiconductor device such as a lateral high voltage field-effect (HV-FET) transistor. The method comprises: a substrate of a first conductivity type (1) , - Implanting a first dopant to form a first region (2) of a second conduct...
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Main Authors | , , |
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Format | Patent |
Language | English French |
Published |
10.05.2007
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Subjects | |
Online Access | Get full text |
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