METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

The method of the invention discloses a cheaper way of manufacturing a semiconductor device such as a lateral high voltage field-effect (HV-FET) transistor. The method comprises: a substrate of a first conductivity type (1) , - Implanting a first dopant to form a first region (2) of a second conduct...

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Bibliographic Details
Main Authors LUDIKHUIZE, ADRIANUS, W, STRIJKER, JOAN, WICHARD, WEIJLAND, INESZ, M
Format Patent
LanguageEnglish
French
Published 10.05.2007
Subjects
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