METHOD FOR DEPOSITING MULTILAYER FILM OF MASK BLANK FOR EUV LITHOGRAPHY AND METHOD FOR PRODUCING MASK BLANK FOR EUV LITHOGRAPHY

• Main Authors: KRICK, DAVID, IKUTA, YOSHIAKI, MA, HSING, CHIGN
• Format: Patent
• Language: English; French
• Published: 19.04.2007
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CINEMATOGRAPHY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTROGRAPHY; HOLOGRAPHY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS THEREFOR; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

A method for depositing, by ion beam sputtering, a multilayer reflective coating of a reflective mask blank for EUV lithography on a substrate (1) having a concave defect formed thereon, characterized in that the method comprises carrying out ion beam sputtering so that an absolute value of an angle a formed between a normal line (1-1) of a substrate (1) and sputtered particles (2) landing on the substrate is maintained so as to satisfy the formula of 35°=a=80° while rotating the substrate about a central axis (3) thereof . Cette invention concerne un procédé de dépôt, par pulvérisation ionique, d'un film réfléchissant multicouche d'une ébauche de masque réfléchissant pour lithographie EUV sur un substrat (1) présentant un défaut concave formé sur sa surface. Le procédé se caractérise en ce qu'il consiste à réaliser une pulvérisation ionique telle qu'une valeur absolue d'un angle a formé entre une ligne normale (1-1) du substrat (1) et des particules pulvérisées (2) tombant sur le substrat est maintenue de sorte à satisfaire la relation 35° = a = 80° pendant la rotation du substrat autour de son axe central (3).