METHOD AND STRUCTURE FOR RIDGE WAVEGUIDE QUANTUM CASCADE LASER WITH P-TYPE OVERGROWTH

The performance characteristics of ridge waveguide QCL may be improved in accordance with the invention by replacing the insulating dielectric layers such as SiO2, Si3N4 or SiC with p-type InP overgrowth layers as well as p- type AlInAs or InGaAsP overgrowth layers, for example . Les caractéristique...

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Bibliographic Details
Main Authors CORZINE, SCOTT, W, BOUR, DAVID, P
Format Patent
LanguageEnglish
French
Published 08.02.2007
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:The performance characteristics of ridge waveguide QCL may be improved in accordance with the invention by replacing the insulating dielectric layers such as SiO2, Si3N4 or SiC with p-type InP overgrowth layers as well as p- type AlInAs or InGaAsP overgrowth layers, for example . Les caractéristiques de performance d'un QCL à guide à moulures peuvent être améliorées selon l'invention en remplaçant les couches isolantes diélectriques comme le SiO2, le Si3N4 ou le SiC par des couches à excroissances de type p au InP de même que des couches à excroissances de type p au AlInAs ou au InGaAsP par exemple.
Bibliography:Application Number: WO2006US28507