A HIGH RESISTIVITY SILICON STRUCTURE AND A PROCESS FOR THE PREPARATION THEREOF

The present invention generally relates to a high resistivity CZ silicon wafer, or a high resistivity silicon structure derived therefrom, and a process for the preparation thereof. In particular, the high resistivity silicon structure comprises a large diameter CZ silicon wafer as the substrate the...

Full description

Saved in:
Bibliographic Details
Main Authors VORONKOVA, GALINA, I, FALSTER, ROBERT, J, BATUNINA, ANNA, V, VORONKOV, VLADIMIR, V
Format Patent
LanguageEnglish
French
Published 18.01.2007
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online AccessGet full text

Cover

More Information
Summary:The present invention generally relates to a high resistivity CZ silicon wafer, or a high resistivity silicon structure derived therefrom, and a process for the preparation thereof. In particular, the high resistivity silicon structure comprises a large diameter CZ silicon wafer as the substrate thereof, wherein the resistivity of the substrate wafer is decoupled from the concentration of acceptor atoms (e.g., boron) therein, the resistivity of the substrate being substantially greater than the resistivity as calculated based on the concentration of said acceptor atoms therein. L'invention concerne, d'une manière générale, une plaquette de silicium CZ très résistive ou une structure de silicium très résistive dérivée de celle-ci et un procédé de préparation de celle-ci. Plus précisément, la structure de silicium très résistive comprend une plaquette de silicium CZ de diamètre important comme substrat de celle-ci, la résistivité de la plaquette substrat étant découplée à partir de la concentration d'atomes accepteurs (par exemple, le bore) dans celle-ci et la résistivité du substrat étant sensiblement supérieure à celle calculée en fonction de la concentration d'atomes accepteurs dans celle-ci.
Bibliography:Application Number: WO2006US19207