EXPOSURE METHOD AND APPARATUS, AND ELECTRONIC DEVICE MANUFACTURING METHOD

An exposure method suitable for forming a fine pattern constituting an electronic device, has high resolution and high cost performance. Two diffraction gratings (P1, P2) are arranged in a light path in series by permitting a wafer (W) or the like constituting the electronic device and the two diffr...

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Bibliographic Details
Main Authors SHIRAISHI, NAOMASA, NAKAMURA, AYAKO, ICHIHARA, YUTAKA, TANIMOTO, AKIKAZU, KUDO, YUJI
Format Patent
LanguageEnglish
French
Japanese
Published 31.08.2006
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:An exposure method suitable for forming a fine pattern constituting an electronic device, has high resolution and high cost performance. Two diffraction gratings (P1, P2) are arranged in a light path in series by permitting a wafer (W) or the like constituting the electronic device and the two diffraction gratings (P1, P2) to be at prescribed intervals. A contrast pattern of interference fringes generated by the diffraction gratings (P1, P2) is exposed on the wafer (W) or the like. The exposure is performed while changing a positional relationship between the wafer (W) or the like and the diffraction gratings (P1, P2) as needed. L'invention concerne un procédé d'exposition convenant à la formation d'un motif fin constituant un composant électronique, qui présente une résolution élevée ainsi que des performances élevées en termes de coût. Deux réseaux de diffraction (P1, P2) sont disposés dans un trajet lumineux en série, en permettant à une tranche (W) ou assimilé de constituer le composant électronique, et les deux réseaux de diffraction (P1, P2) de se trouver à des intervalles prescrits. Un motif de contraste de franges d'interférence générées par les réseaux de diffraction (P1, P2) est exposé sur la tranche (W) ou assimilé. L'exposition est effectuée tout en changeant à la demande la relation de position entre la tranche (W) ou autre et les réseaux de diffraction (P1, P2).
Bibliography:Application Number: WO2006JP303333