N2-BASED PLASMA TREATMENT FOR POROUS LOW-K DIELECTRIC FILMS
A semiconductor device is fabricated by forming a low-k dielectric material (20) over a substrate (10), depositing a liner (65) on a portion of the low-k dielectric material, and exposing the liner to a plasma (70). A barrier layer may be deposited over the liner. On fabrique un dispositif en semi-c...
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Main Authors | , , |
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Format | Patent |
Language | English French |
Published |
10.08.2006
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Subjects | |
Online Access | Get full text |
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