N2-BASED PLASMA TREATMENT FOR POROUS LOW-K DIELECTRIC FILMS

• Main Authors: SMITH, PATRICIA, BEAUREGARD, JIN, CHANGMING, AJMERA, SAMEER, KUMAR
• Format: Patent
• Language: English; French
• Published: 10.08.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device is fabricated by forming a low-k dielectric material (20) over a substrate (10), depositing a liner (65) on a portion of the low-k dielectric material, and exposing the liner to a plasma (70). A barrier layer may be deposited over the liner. On fabrique un dispositif en semi-c...