HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE

A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon...

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Bibliographic Details
Main Authors BHARATHAN, JAYESH, DONOFRIO, MATTHEW, EDMOND, JOHN, ADAM, SLATER, DAVID, BEARDSLEY, JR
Format Patent
LanguageEnglish
French
Published 06.07.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region. L'invention concerne une diode électroluminescente en nitrure du groupe III à efficacité élevée. Cette diode comprend un substrat sélectionné dans le groupe comprenant des matières semi-conductrices et des matières conductrices, une zone électroluminescente à base de nitrure de groupe III située sur le substrat ou au-dessus de ce substrat, et, une surface lenticulaire comprenant du carbure de silicium située sur la zone électroluminescente ou au-dessus de cette zone.
Bibliography:Application Number: WO2005US32894