SILICON EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME

A silicon epitaxial wafer is provided by forming an epitaxial layer composed of a silicon single crystal by epitaxial growing, on a front plane of a silicon single crystal wafer which is cut out from a CZ silicon ingot doped with carbon within a concentration range of 5×10<sup L'invention co...

Full description

Saved in:
Bibliographic Details
Main Authors HOURAI, MASATAKA, SADAMITSU, SHINSUKE
Format Patent
LanguageEnglish
French
Japanese
Published 09.03.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A silicon epitaxial wafer is provided by forming an epitaxial layer composed of a silicon single crystal by epitaxial growing, on a front plane of a silicon single crystal wafer which is cut out from a CZ silicon ingot doped with carbon within a concentration range of 5×10<sup L'invention concerne une tranche épitaxiale en silicium obtenue en formant une couche épitaxiale composée d'un monocristal de silicium par croissance épitaxiale, sur un plan antérieur d'une tranche en monocristal de silicium qui est découpée dans un lingot de silicium CZ dopé de carbone dans une plage de concentrations allant de 5×10<sup
Bibliography:Application Number: WO2005JP15801