INTEGRATED TRANSISTOR MODULE AND METHOD OF FABRICATING SAME
An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A lowside transistor is mounted upon the low-side land wit...
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Main Authors | , , |
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Format | Patent |
Language | English French |
Published |
02.02.2006
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Subjects | |
Online Access | Get full text |
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Summary: | An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A lowside transistor is mounted upon the low-side land with its drain electrically connected to the low-side land. A high-side transistor is mounted upon the high-side land with its source electrically connected to the high-side land.
Cette invention concerne un module de transistor intégré comprenant un châssis de brochage qui définit au moins un cordon bas et au moins un cordon haut. Une partie à décrochement du châssis de brochage assure une interconnexion mécanique et électrique entre les cordons bas et haut. Un transistor côté bas est monté sur le côté bas. Sur le côté haut est monté un transistor côté haut dont la source est reliée électriquement au cordon haut. |
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Bibliography: | Application Number: WO2005US21877 |