ULTRA-THIN DIE AND METHOD OF FABRICATING SAME

• Main Authors: MANCINI, DAVID, P, CHUNG, YOUNG, DAUKSHER, WILLIAM, J, YOUNG, STEVEN, R, BAIRD, ROBERT, W, WESTON, DONALD, F
• Format: Patent
• Language: English; French
• Published: 16.03.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions (42, 43) are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die. Selon une variante spécifique, l'invention concerne un procédé de traitement de substrat à semi-conducteurs : amincissement de substrat et formation de puce sur substrat selon une technique classique. On établit des zones de tranchées (42, 43) sur une partie arrière de substrat. Suite à une attaque isotropique de l'arrière, le substrat est aminci, mais avec maintien de la profondeur des tranchées, ce qui facilite la singulation de puce.