METHOD AND APPARATUS FOR FABRICATING ULTRA-SHALLOW JUNCTION METAL-OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES

A method and apparatus for fabricating a metal oxide semiconductor integrated circuit device, the method comprising sequentially: (a) providing a gate (106) on a substrate (100); (b) providing a spacer (108) on a sidewall of said gate (106); (c) forming a source/drain region (110) in said substrate...

Full description

Saved in:
Bibliographic Details
Main Authors ROBILLIART, ETIENNE, SALVETTI, FREDERIC, WACQUANT, FRANCOIS, PALLA, RAMIRO, DRAY, ALEXANDRE, LENOBLE, DAMIEN
Format Patent
LanguageEnglish
French
Published 13.10.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method and apparatus for fabricating a metal oxide semiconductor integrated circuit device, the method comprising sequentially: (a) providing a gate (106) on a substrate (100); (b) providing a spacer (108) on a sidewall of said gate (106); (c) forming a source/drain region (110) in said substrate (100); (d) substantially completely removing said spacer (108); (e) forming a source/drain extension region (114) in said substrate (100); (f) forming a source drain pocket region (116) in said substrate (100), beneath said gate (106); and (g) performing an annealing process to substantially simultaneously electrically activate said source/drain region (110), said source/drain extension region (114) and said source/drain pocket region (116). L'invention concerne un procédé et un appareil permettant de fabriquer un composant de circuit intégré à semi-conducteur métal-oxyde, ce procédé comportant les étapes séquentielles consistant à: (a) créer une grille (106) sur un substrat (100); (b) créer un intercalaire (108) sur un flanc de ladite grille (106); (c) former une région de source/drain (110) dans ledit substrat (100); (d) éliminer pratiquement entièrement ledit intercalaire (108); (e) former une région d'extension de source/drain (114) dans ledit substrat (100); (f) former une région de poche de source/drain (116) dans ledit substrat (100), au-dessous de ladite grille (106); et (g) réaliser un processus de recuit pour activer électriquement pratiquement simultanément ladite région de source/drain (110), ladite région d'extension de source/drain (114) et ladite région de poche de source/drain (116).
Bibliography:Application Number: WO2004IB03991