METHOD OF MANUFACTURING MULTI-LEVEL CONTACTS BY SIZING OF CONTACT SIZES IN INTEGRATED CIRCUITS
A method [600] for forming an integrated circuit includes etching a first opening [228] [338] [402] to a first depth in a dielectric material [322] over a semiconductor device [317] on a first semiconductor substrate [202] and etching a second opening [230] [340] [404] to a second depth in the diele...
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Main Authors | , |
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Format | Patent |
Language | English French |
Published |
10.02.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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