METHOD OF MANUFACTURING MULTI-LEVEL CONTACTS BY SIZING OF CONTACT SIZES IN INTEGRATED CIRCUITS

A method [600] for forming an integrated circuit includes etching a first opening [228] [338] [402] to a first depth in a dielectric material [322] over a semiconductor device [317] on a first semiconductor substrate [202] and etching a second opening [230] [340] [404] to a second depth in the diele...

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Bibliographic Details
Main Authors HELLIG, KAY, AMINPUR, MASSUD
Format Patent
LanguageEnglish
French
Published 10.02.2005
Edition7
Subjects
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