VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD

• Main Authors: OTSUKA, TORU, KANAYA, KOICHI, KANNO, TAKAO
• Format: Patent
• Language: English; French; Japanese
• Published: 10.02.2005
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A vapor deposition apparatus for vapor-depositing a silicon epitaxial layer on a major surface of a silicon single crystal substrate while heating both sides of the silicon single crystal substrate mounted on a spot-faced portion formed on a susceptor, wherein the spot-faced portion has an outside part supporting the back of the silicon single crystal substrate and an inside part provided inside the outside part and recessed more deeply than the outside part, and the susceptor has a longitudinal cross section curved in an inverted-U shape. L'invention concerne un appareil de dépôt par évaporation sous vide conçu pour déposer par évaporation sous vide une couche épitaxiale de silicium sur une grande surface d'un substrat monocristallin de silicium, lequel substrat, dont les deux côtés sont chauffés, est monté sur une partie lamée formée sur un suscepteur, la partie lamée présentant un élément externe supportant le dos du substrat monocristallin de silicium et un élément interne placé dans l'élément externe et évidé plus profondément que celui-ci, et le suscepteur présentant une section transversale incurvée en forme de U inversé.