MAGNETOELECTRONICS INFORMATION DEVICE HAVING A COMPOUND MAGNETIC FREE LAYER

A magnetoelectronics information device (20) is provided that includes two multi-layer structures (24, 26) and a spacer layer (28) interposed between the two multi-layer structures. Each of the multi-layer structures has two magnetic sublayers (38, 40, and 44, 46) and a spacer layer (42, 48) interpo...

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Bibliographic Details
Main Author ENGEL, BRADLEY, N
Format Patent
LanguageEnglish
French
Published 09.09.2005
Edition7
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A magnetoelectronics information device (20) is provided that includes two multi-layer structures (24, 26) and a spacer layer (28) interposed between the two multi-layer structures. Each of the multi-layer structures has two magnetic sublayers (38, 40, and 44, 46) and a spacer layer (42, 48) interposed between the two magnetic sublayers. The spacer layer interposed between the two magnetic sublayers provides an antiferromagnetic exchange coupling that is quantified by a saturation field. The spacer layer interposed between the two multi-layer structures provides a second antiferromagnetic exchange coupling is quantified by another saturation field that is less than the first saturation field. L'invention porte sur un dispositif d'information utile en magnétoélectronique (20) qui comprend deux structures multicouches (24, 26) entre lesquelles est placée une couche d'espacement (28). Chacune des structures multicouches possède deux sous-couches magnétiques (38, 40 et 44, 46) entre lesquelles est placée une couche d'espacement (42, 48). La couche d'espacement placée entre les deux sous-couches magnétiques forme un couplage d'échange antiferromagnétique qui est quantifié par un champ de saturation. La couche d'espacement placée entre les deux structures multicouches forme un second couplage d'échange antiferromagnétique qui est quantifié par un autre champ de saturation inférieur au premier.
Bibliography:Application Number: WO2004US14252