IMAGE SENSOR AND METHOD FOR FORMING ISOLATION STRUCTURE FOR PHOTODIODE
An image sensor is disclosed which comprises a plurality of photodiodes and device isolation regions. The photodiodes are arranged along the surface of a semiconductor substrate, and each photodiode has a first region of a first conductivity type formed along the semiconductor substrate, a second re...
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Main Authors | , , |
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Format | Patent |
Language | English French Japanese |
Published |
06.01.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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