CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE
A cleaning composition comprises at least quaternary ammonium hydroxide, a water-soluble organic solvent, water, an anticorrosive, and potassium hydroxide of 1 mass percent or less of a total amount of the solution. This cleaning composition can singly and effectively remove a photoresist film, a bu...
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Main Authors | , , , , , |
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Format | Patent |
Language | English French |
Published |
29.12.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A cleaning composition comprises at least quaternary ammonium hydroxide, a water-soluble organic solvent, water, an anticorrosive, and potassium hydroxide of 1 mass percent or less of a total amount of the solution. This cleaning composition can singly and effectively remove a photoresist film, a buried material, a metallic residue from the surface of a semiconductor substrate.
L'invention porte sur une composition nettoyante contenant au moins un hydroxyde d'ammonium quaternaire, un solvant organique hydrosoluble, de l'eau, un agent anticorrosion, un hydroxyde de potassium de 1 masse en pourcentage ou moins d'une quantité totale de la solution. Cette composition nettoyante peut à elle seule ôter de manière efficace un film de photorésine, un matériau enterré, un résidu métallique de la surface d'un substrat à semi-conducteur. |
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Bibliography: | Application Number: WO2004JP08951 |