SURFACE MODIFICATION METHOD AND SURFACE MODIFICATION APPARATUS FOR INTERLAYER INSULATING FILM

• Main Author: HISHIYA, SHINGO
• Format: Patent
• Language: English; French; Japanese
• Published: 04.11.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A surface modification method and a surface modification apparatus for interlayer insulating films are disclosed which enable to improve adhesion properties of an interlayer insulating film without changing the dielectric constant. An interlayer insulating film is formed on a semiconductor wafer (10) by firing a coating film. The surface of the interlayer insulating film is modified by heating the inside of a reaction tube (2), where the semiconductor wafer (10) is housed, to a certain temperature while supplying a gas with oxidizing activity into the reaction tube (2). The gas with oxidizing activity is ozone, water vapor, oxygen or a mixed gas of hydrogen and oxygen. La présente invention concerne un procédé de modification de surface et un appareil de modification de surface destiné à des films isolants intercouche qui permettent d'améliorer les propriétés d'adhésion d'un film isolant intercouche sans en changer la constante diélectrique. On forme un film isolant intercouche sur une plaquette (10) semiconductrice en cuisant un film de revêtement. La surface de ce film isolant intercouche est modifiée par le chauffage de l'intérieur d'un tube de réaction (2), dans lequel la plaquette semiconductrice (10) est placée, à une certaine température avec une alimentation simultanée d'un gaz à activité oxydante dans ce tube de réaction (2). Le gaz à activité oxydante est de l'ozone, de la vapeur d'eau, de l'oxygène ou un gaz mélangé hydrogène et oxygène.