TAILORING NITROGEN PROFILE IN SILICON OXYNITRIDE USING RAPID THERMAL ANNEALING WITH AMMONIA UNDER ULTRA-LOW PRESSURE

A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing...

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Main Authors NARWANKAR, PRAVIN, K, LEPERT, ARAUD, MINER, GARY
Format Patent
LanguageEnglish
French
Published 04.11.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process. L'invention concerne un procédé pour réaliser un film diélectrique comportant de l'azote. Ce procédé consiste à incorporer de l'azote dans le film diélectrique au moyen d'un gaz de nitruration et d'un procédé de traitement thermique rapide dans lequel on applique une pression ultra-basse inférieure ou égale à environ 10 torrs.
AbstractList A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process. L'invention concerne un procédé pour réaliser un film diélectrique comportant de l'azote. Ce procédé consiste à incorporer de l'azote dans le film diélectrique au moyen d'un gaz de nitruration et d'un procédé de traitement thermique rapide dans lequel on applique une pression ultra-basse inférieure ou égale à environ 10 torrs.
Author MINER, GARY
LEPERT, ARAUD
NARWANKAR, PRAVIN, K
Author_xml – fullname: NARWANKAR, PRAVIN, K
– fullname: LEPERT, ARAUD
– fullname: MINER, GARY
BookMark eNqNjM0KgkAURl3Uor93uNBakIrE5UWvemG8EzMj1kokplWooO9PCT1Aqw_OOXzbYNUPvd8Es0NW2rAUIOyMLkjgZnTOioAFLCtOtYC-PxbNGUFtl9jgjTNwJZkKFaAIoVp4w64ErCotjFBLRgZq5QyGSjffY7K2NrQP1q_uPfnDb3fBMSeXlqEfh9ZPY_f0vZ_bRp-i6BLFUZxcMTn_V30AWGE8Ig
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate ADAPTATION DE PROFIL D'AZOTE DANS DE L'OXYNITRURE DE SILICIUM PAR TRAITEMENT THERMIQUE RAPIDE AVEC DE L'AMMONIAQUE SOUS PRESSION ULTRA-BASSE
Edition 7
ExternalDocumentID WO2004070796A9
GroupedDBID EVB
ID FETCH-epo_espacenet_WO2004070796A93
IEDL.DBID EVB
IngestDate Fri Jul 19 12:53:54 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
French
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_WO2004070796A93
Notes Application Number: WO2004US03442
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041104&DB=EPODOC&CC=WO&NR=2004070796A9
ParticipantIDs epo_espacenet_WO2004070796A9
PublicationCentury 2000
PublicationDate 20041104
PublicationDateYYYYMMDD 2004-11-04
PublicationDate_xml – month: 11
  year: 2004
  text: 20041104
  day: 04
PublicationDecade 2000
PublicationYear 2004
RelatedCompanies MINER, GARY
LEPERT, ARAUD
NARWANKAR, PRAVIN, K
APPLIED MATERIALS, INC
RelatedCompanies_xml – name: MINER, GARY
– name: LEPERT, ARAUD
– name: APPLIED MATERIALS, INC
– name: NARWANKAR, PRAVIN, K
Score 2.5972483
Snippet A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title TAILORING NITROGEN PROFILE IN SILICON OXYNITRIDE USING RAPID THERMAL ANNEALING WITH AMMONIA UNDER ULTRA-LOW PRESSURE
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041104&DB=EPODOC&locale=&CC=WO&NR=2004070796A9
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwEA9zivqmU_FjSkDZW3GzbewehmRtuka6pNTOzaeRri0I0g1X8d83iZvuaW_hDo58cHe55O53ANy1nSIV2ezBEMiWAYrjFIbj2MLo2KlVoAylItcJsgwFI-t5Yk9q4GNdC6NxQr81OKLUqJnU90rb68X_I5ancyuX9-m7JM2f_KTntdbRsdVR3Wy9fo9E3ONuy3Vl3NZiseZpNDiEuztgV12kFdI-ee2rupTFplPxj8BeJOWV1TGo5WUDHLjr3msNsD9cfXnL4Ur7liegSjANuUpfgIwmMR8QBqOY-zQkkDL4QkPqcgb55E2xqUegaqoxgDGOqAeTgMRDHELMGMGhoo9pEkCsrCrFUFcbwFGYxNgI-RjqoxnF5BTc-iRxA0NOf_q3W9Mx31yreQbq5bzMzwEUZvEg71NW1jULS5hd0RYz9JijVHptC2XtC9DcJulyO_sKHP5iIHaMttUE9erzK7-W_rpKb_Q2_wDrqJBS
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEG8QjfimqPEDtYmGt0VgWxkPxNR9sOpYl1kEn0jHtsTEDCIz_vu2FZQn3ppecrm2ud5de_c7AO5aVp7wdNbRODJFgGJZuWZZJtfaZmLkKEUJz1SCbIj8kfE0MScV8LGuhVE4od8KHFFo1Ezoe6nu68X_I5ajciuX98m7mJo_eKzvNNfRsdGW3Wydx74bUYfaTdsWcVszjBVNocEh3NsBu12Jzyudp9dHWZey2DQq3iHYiwS_ojwClayog5q97r1WB_vD1Ze3GK60b3kMSoZJQGX6AgwJi-nADWEUU48ELiQhfCEBsWkI6eRNkonjQtlUYwBjHBEHMt-NhziAOAxdHMj5MWE-xPJWJRiqagM4CliMtYCOoTqaUeyegFvPZbavCfGnf7s1HdPNteqnoFrMi-wMQK7nHeFPGWlPzw2u93iLz1A3Q4mw2gZKW-egsY3TxXbyDaj5bBhMhfzPl-DgFw-xrbWMBqiWn1_ZlbDdZXKttvwH1WOTPw
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=TAILORING+NITROGEN+PROFILE+IN+SILICON+OXYNITRIDE+USING+RAPID+THERMAL+ANNEALING+WITH+AMMONIA+UNDER+ULTRA-LOW+PRESSURE&rft.inventor=NARWANKAR%2C+PRAVIN%2C+K&rft.inventor=LEPERT%2C+ARAUD&rft.inventor=MINER%2C+GARY&rft.date=2004-11-04&rft.externalDBID=A9&rft.externalDocID=WO2004070796A9