TAILORING NITROGEN PROFILE IN SILICON OXYNITRIDE USING RAPID THERMAL ANNEALING WITH AMMONIA UNDER ULTRA-LOW PRESSURE

A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing...

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Bibliographic Details
Main Authors NARWANKAR, PRAVIN, K, LEPERT, ARAUD, MINER, GARY
Format Patent
LanguageEnglish
French
Published 04.11.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process. L'invention concerne un procédé pour réaliser un film diélectrique comportant de l'azote. Ce procédé consiste à incorporer de l'azote dans le film diélectrique au moyen d'un gaz de nitruration et d'un procédé de traitement thermique rapide dans lequel on applique une pression ultra-basse inférieure ou égale à environ 10 torrs.
Bibliography:Application Number: WO2004US03442