DIELECTRIC FILM FORMING METHOD

• Main Authors: OHBA, TAKAYUKI, XIAO, SHIQIN
• Format: Patent
• Language: English; French; Japanese
• Published: 05.08.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method for forming a high-K dielectric film on a substrate comprises a plurality of steps, each step including a processing for modifying the properties of the formed high-K dielectric film in an atmosphere mainly containing nitrogen. L'invention concerne un procédé pour former un film diélectrique à constante K élevée sur un substrat, ledit procédé comportant une pluralité d'étapes, chaque étape comprenant un traitement destiné à modifier les propriétés du film diélectrique formé, à constante K élevée, dans une atmosphère contenant principalement de l'azote.