LASER APPLICATION METHOD

A laser application method in which a linear laser beam is reflected from a mirror to bend the optical path of the laser beam, the width of the laser beam in the minor axis direction is adjusted by a minor-axis homogenizer, and the laser beam is applied to an amorphous silicon semiconductor on a lig...

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Bibliographic Details
Main Authors MITSUHASHI, HIROSHI, MIZOUCHI, KIYOTSUGU, AWANO, TAKASHI
Format Patent
LanguageEnglish
French
Japanese
Published 26.02.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
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Summary:A laser application method in which a linear laser beam is reflected from a mirror to bend the optical path of the laser beam, the width of the laser beam in the minor axis direction is adjusted by a minor-axis homogenizer, and the laser beam is applied to an amorphous silicon semiconductor on a light-transmitting substrate. The intensity of the laser beam is adjusted by adjusting the angle of the mirror. L'invention concerne un procédé d'application d'un laser. Selon ce procédé, un faisceau laser linéaire est réfléchi par un miroir de sorte que le chemin optique du faisceau laser soit dévié. La largeur du faisceau laser dans la direction du petit axe est réglée par un dispositif d'homogénéisation de petit axe et le faisceau laser est appliqué à un semi-conducteur au silicium amorphe sur un substrat émetteur de lumière. L'intensité du faisceau laser est réglée par réglage de l'angle du miroir.
Bibliography:Application Number: WO2003JP10223