METHOD OF ANNEALING ELECTRICALLY CONDUCTIVE ZINC OXIDE FILMS

The electrical conductivity of a zinc oxide layer (15) is improved by annealing (15) the layer at a temperature of between about 500°C and about 600°C in an inert atmosphere having sufficient levels of entrained ZnO to permit reduction of oxygen levels in the lattice structure of the zinc oxide laye...

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Bibliographic Details
Main Authors VINSON, MATTHEW, SCOTT, MCENTYRE, ERIC, J, ZHAO, ZHIYONG, HUNT, ANDREW, T
Format Patent
LanguageEnglish
French
Published 15.01.2004
Edition7
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Summary:The electrical conductivity of a zinc oxide layer (15) is improved by annealing (15) the layer at a temperature of between about 500°C and about 600°C in an inert atmosphere having sufficient levels of entrained ZnO to permit reduction of oxygen levels in the lattice structure of the zinc oxide layer (15) while maintaining zinc levels in the lattice structure. La conductivité électrique d'une couche d'oxyde de zinc est améliorée par recuit de la couche à une température comprise entre environ 500 DEG C et environ 600 DEG C en atmosphère inerte ayant des teneurs en ZnO suffisantes pour permettre la réduction des niveaux d'oxygène dans la structure réticulaire de la couche d'oxyde de zinc, tout en maintenant les teneurs en zinc dans la structure réticulaire.
Bibliography:Application Number: WO2002US25350