ATTENUATED EMBEDDED PHASE SHIFT PHOTOMASK BLANKS

• Main Authors: HIBBS, MICHAEL, STRAIGHT, MAHOROWALA, ARPAN, PRAVIN, ANGELOPOULOS, MARIE, CHEY, S., JAY, RACETTE, KENNETH, CHRISTOPHER, BABICH, KATHERINA, LANG, ROBERT, N
• Format: Patent
• Language: English; French
• Published: 23.10.2003
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CINEMATOGRAPHY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS THEREFOR; METALLURGY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001 % up to 15 % at 157 nm) is obtained by this process. La présente invention concerne une ébauche de masque de photogravure atténuant le déphasage inclus et donnant un déphasage de la lumière transmise. Cette ébauche est faite d'un film optiquement translucide à base de métal, de silicium, d'azote et d'oxygène. L'adjonction d'une couche d'arrêt d'attaque chimique permet d'améliorer la sélectivité de l'attaque chimique de la couche de déphasage. Grâce à ce procédé, on obtient une large place de transmission optique (de 0,001 % à 15 % à 157 nm).