A HIGH PERFORMANCE BIFET LOW NOISE AMPLIFIER

According to one exemplary embodiment, a circuit (302) comprises a bipolar transistor (304) having a base, an emitter, and a collector. For example, the bipolar transistor (304) can be an NPN SiGe HBT. The base of the bipolar transistor (304) is an input of the circuit (302). The emitter of the bipo...

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Bibliographic Details
Main Authors MA, PINGXI, RACANELLI, MARCO
Format Patent
LanguageEnglish
French
Published 13.05.2004
Edition7
Subjects
AMPLIFIERS
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
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