SEMICONDUCTOR DEVICE WITH REDUCED LINE-TO-LINE CAPACITANCE AND CROSS TALK NOISE

• Main Authors: HAUSE, FREDERICK, N, HORSTMANN, MANFRED, WIECZOREK, KARSTEN
• Format: Patent
• Language: English; French
• Published: 23.05.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A transistor device (200) is disclosed, having an insulating material disposed between the gate electrode (204) and the drain and source lines, wherein the dielectric constant of the insulating amterial is 3.5 or less. Accodingly, the capacitance between the gate electrode and the drain and source l...