SEMICONDUCTOR DEVICE WITH REDUCED LINE-TO-LINE CAPACITANCE AND CROSS TALK NOISE

A transistor device (200) is disclosed, having an insulating material disposed between the gate electrode (204) and the drain and source lines, wherein the dielectric constant of the insulating amterial is 3.5 or less. Accodingly, the capacitance between the gate electrode and the drain and source l...

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Bibliographic Details
Main Authors HAUSE, FREDERICK, N, HORSTMANN, MANFRED, WIECZOREK, KARSTEN
Format Patent
LanguageEnglish
French
Published 23.05.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor device (200) is disclosed, having an insulating material disposed between the gate electrode (204) and the drain and source lines, wherein the dielectric constant of the insulating amterial is 3.5 or less. Accodingly, the capacitance between the gate electrode and the drain and source lines can be reduced, thereby improving signal performance of the field effect transistor (200) with decreased cross talk noise. L'invention concerne un dispositif transistor (200) comprenant un matériau d'isolation disposé entre une électrode de grille (204) et le drain et des ligne de source, la constante diélectrique dudit matériau isolant étant égale ou inférieure à 3,5. De ce fait, il est possible de réduire la capacitance entre l'électrode de grille et le drain et les ligne de source, ce qui permet d'améliorer la performance des signaux du transistor (200) à effet de champ tout en réduisant le bruit diaphonique.
Bibliography:Application Number: WO2001US31199