METHOD FOR PROCESSING A SEMICONDUCTOR WAFER USING DOUBLE-SIDE POLISHING

A method for simultaneously polishing front and back surfaces of a semiconductor wafer comprises the step of providing a polishing apparatus having a wafer carrier generally disposed between a first polishing pad and a second polishing pad. The first pad has a hardness significantly greater than a h...

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Bibliographic Details
Main Authors ZHANG, GUOQIANG, D, RAGAN, TRACY, M, KEARNS, JULIE, A, ERK, HENRY, F
Format Patent
LanguageEnglish
French
Published 14.02.2002
Edition7
Subjects
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Summary:A method for simultaneously polishing front and back surfaces of a semiconductor wafer comprises the step of providing a polishing apparatus having a wafer carrier generally disposed between a first polishing pad and a second polishing pad. The first pad has a hardness significantly greater than a hardness of the second pad. The wafer is placed in the wafer carrier so that the front surface faces the first pad and so that the back surface faces the second pad. A polishing slurry is applied to at least one of the pads and the carrier, first pad and second pad are rotated. The front surface is brought into contact with the first pad and the back surface is brought into contact with the second pad for polishing the front and back surfaces of the wafer whereby less wafer material is removed from the back surface engaged by the second pad and the back surface has less gloss than the front surface after polishing. L'invention concerne un procédé permettant de polir de manière simultanée les faces supérieure et inférieure d'une plaquette semi-conductrice, lequel comprend les étapes consistant à utiliser un appareil de polissage comprenant un porte-plaquettes généralement disposé entre un premier tampon à polir et un second tampon à polir. Le premier tampon à polir présente une dureté sensiblement supérieure à celle du second tampon. On place la plaquette dans le porte-plaquettes de manière que la face supérieure regarde le premier tampon et que la face inférieure regarde le second tampon. On applique une suspension de polissage à au moins un des tampons et au porte-plaquettes, les premier et second tampons étant tournés. On met en contact la face supérieure avec le premier tampon et la face inférieure avec le second tampon aux fins de polissage des faces supérieure et inférieure de la plaquette, moins de matériau de la plaquette étant éliminé de la face inférieure qui est en contact avec le second tampon et cette face étant moins brillante que la face supérieure après le polissage.
Bibliography:Application Number: WO2001US21238