CERAMICS FILM AND PRODUCTION METHOD THEREFOR, AND FERROELECTRIC CAPACITOR, SEMICONDUCTOR DEVICE, OTHER ELEMENTS

• Main Authors: FURUYAMA, KOICHI, NATORI, EIJI, TASAKI, YUZO, KIJIMA, TAKESHI
• Format: Patent
• Language: English; French; Japanese
• Published: 27.12.2002
• Edition: 7
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

A method of producing a ceramics film comprising the step of forming a ceramics film by crystallizing a ceramics source solution containing a first source solution and a second source solution. The first source solution is different in category from the second source solution, the former being used to produce ferroelectrics and the latter being used to produce oxides such as ABO system, a solvent contained in the former is different in polarity from that contained in the latter, and the first source solution and the second source solution are formed into films with phases separated to thereby form first crystals consisting of the first source solution intermittently in the plane direction of the ceramics film and form second crystals consisting of the second source solution so as to intervene between the first crystals. La présente invention concerne un procédé de production d'un film de céramique impliquant de former un film de céramique par cristallisation d'une solution source de céramiques contenant une première solution source et une seconde solution source. La première solution source est différente par sa catégorie de la seconde solution source, la première servant à la production de matières ferroélectriques, et la dernière servant à produire des oxydes tels que le système ABO. Un solvant contenu dans la première présente une polarité différente de celle du solvant de la dernière. En outre, les deux solutions sources sont mises à former des films dont les phases sont séparées de façon à former des premiers cristaux constitués de la première solution source de façon intermittente dans le sens du plan du film de céramiques, et à former des seconds cristaux constitués de la seconde solution source de façon à intervenir entre les premiers cristaux.