SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS PRODUCTION METHOD

The isolation widths (La and La') of an element isolation part is relatively small. Therefore the influence of the stress on the channel region of a second MISFET (Q2) is strong, and the change of the threshold voltage is relatively great. The isolation widths (Lb and Lb') of the element i...

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Bibliographic Details
Main Authors TAINAKA, YASUSHI, SONOBE, YASUO, ISHIBASHI, KOUSUKE
Format Patent
LanguageEnglish
French
Japanese
Published 12.12.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The isolation widths (La and La') of an element isolation part is relatively small. Therefore the influence of the stress on the channel region of a second MISFET (Q2) is strong, and the change of the threshold voltage is relatively great. The isolation widths (Lb and Lb') of the element isolation part (4) is relatively wide. Therefore the influence of the stress on the channel region of a fourth MISFET (Q4) is weak, and the change of the threshold voltage is relatively small. Les largeurs d'isolation (La et La') d'une portion d'isolation d'élément sont relativement petites. C'est pourquoi, l'influence de la contrainte sur une zone de canal d'un deuxième MISFET (Q2) est forte, et la modification de la tension seuil est relativement importante. Les largeurs d'isolation (Lb et Lb') de la portion d'isolation d'élément (4) sont relativement larges. C'est pourquoi l'influence de la contrainte sur une zone de canal d'un quatrième MISFET (Q4) est faible, et la modification de la tension seuil est relativement peu importante.
Bibliography:Application Number: WO2002JP03944