PRODUCTION DEVICE AND PRODUCTION METHOD FOR SILICON-BASED STRUCTURE

• Main Authors: SUZUKI, YASUHIKO, SHIMAOKA, KEIICHI, OKUDA, KATSUHARU, MIZUNO, TAKANORI, SAKATA, JIRO, MATSUI, MASAYUKI
• Format: Patent
• Language: English; French; Japanese
• Published: 10.10.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES; MICROSTRUCTURAL TECHNOLOGY; PERFORMING OPERATIONS; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS; SEMICONDUCTOR DEVICES; TRANSPORTING

A simplified production process for a hollow silicon-based structure. A production device for silicon-based structure, which produces a hollow silicon-based structure by working on a sample having a silicon oxide layer formed on a silicon substrate and covered with a silicon layer, and which comprises first gas supply units (20, 21), second gas supply units (30, 31), a etching reaction chamber (10), selectively communicating means (23-26, 34, 35), and a gas exhaust means (42). A first gas etches silicon, while a second gas etches silicon oxide but scarcely etches silicon. Selectively communicating means (23-26, 34, 35) selectively allow the etching reaction chamber (10) to communicate to either of first gas supply units (20, 21) and second gas supply units (30, 31). The gas exhaust mean (42) exhausts gas in the etching reaction chamber (10). A simplified production process for a hollow silicon-based structure. A production device for silicon-based structure, which produces a hollow silicon-based structure by working on a sample having a silicon oxide layer formed on a silicon substrate and covered with a silicon layer, and which comprises first gas supply units (20, 21), second gas supply units (30, 31), a etching reaction chamber (10), selectively communicating means (23-26, 34, 35), and a gas exhaust means (42). A first gas etches silicon, while a second gas etches silicon oxide but scarcely etches silicon. Selectively communicating means (23-26, 34, 35) selectively allow the etching reaction chamber (10) to communicate to either of first gas supply units (20, 21) and second gas supply units (30, 31). The gas exhaust mean (42) exhausts gas in the etching reaction chamber (10). L'invention concerne un procédé simplifié de production d'une structure creuse à base de silicium. L'invention concerne également un dispositif de production d'une structure à base de silicium, permettant de produire une structure creuse à base de silicium à partir d'un échantillon comportant une couche d'oxyde de silicium formée sur un substrat de silicium et recouverte d'une couche de silicium. Ce dispositif comprend des premières unités d'alimentation en gaz (20, 21), des secondes unités d'alimentation en gaz (30, 31), une chambre de réaction de gravure (10), des moyens communiquant de façon sélective (23-26, 34, 35), ainsi qu'un système d'évacuation des gaz (42). Un premier gaz attaque le silicium et un second gaz attaque l'oxyde de silicium, mais attaque difficilement le silicium. Les moyens communiquant de façon sélective (23-26, 34, 35) font communiquer de façon sélective la chambre de réaction de gravure (10) avec les premières (20, 21) ou les secondes unités d'alimentation en gaz (30, 31). Le système d'évacuation des gaz (42) évacue les gaz dans la chambre de réaction de gravure (10).