DISSOLUTION OF METAL PARTICLES PRODUCED BY POLISHING

A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide. L'invention concerne un procéd...

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Bibliographic Details
Main Authors GETTMAN, DAVID, THOMAS, TERENCE, M, BURKE, PETER, A, TRAN, TONY, QUAN, SACHAN, VIKAS, LACK, CRAIG, D
Format Patent
LanguageEnglish
French
Published 26.07.2001
Edition7
Subjects
DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TRANSPORTING
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Summary:A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide. L'invention concerne un procédé de polissage d'une surface métallique sur un substrat semi-conducteur à l'aide d'un tampon de polissage et de peroxyde d'hydrogène. Ce procédé consiste à enlever les particules métalliques du substrat semi-conducteur par polissage, et à dissoudre les particules dans le peroxyde d'hydrogène.
Bibliography:Application Number: WO2001US01485