INTERFEROMETRIC METHOD FOR ENDPOINTING PLASMA ETCH PROCESSES

A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber. Procédé servant à co...

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Bibliographic Details
Main Author HOWALD, ARTHUR, M
Format Patent
LanguageEnglish
French
Published 05.04.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber. Procédé servant à contrôler le processus de fabrication d'un composant. Ce procédé consiste à effectuer une gravure dans une tranche placée à l'intérieur d'une chambre et à détecter l'intensité d'une partie d'une lumière réfléchie depuis une surface de la tranche et rediffusée au niveau d'une surface intérieure de diffusion de la chambre.
Bibliography:Application Number: WO2000US26600