Method and IC structure for increasing pitch between gates

Aspects of the present disclosure include integrated circuit (IC) structure and methods for increasing a pitch between gates. Methods according to the present disclosure can include: providing an IC structure including: a first gate structure and a second gate structure each positioned on a substrat...

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Bibliographic Details
Main Authors Chowdhury, Murshed M, Greene, Brian J, Kumar, Arvind, Lin, Chung-Hsun
Format Patent
LanguageEnglish
Published 05.06.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Aspects of the present disclosure include integrated circuit (IC) structure and methods for increasing a pitch between gates. Methods according to the present disclosure can include: providing an IC structure including: a first gate structure and a second gate structure each positioned on a substrate, a dummy gate positioned between the first and second gate structures, and forming a mask over the first and second gate structures; and selectively etching the dummy gate from the IC structure to expose a portion of the substrate underneath the dummy gate of the IC structure, without affecting the first and second gate structures.
Bibliography:Application Number: US201615085077