Isolated and bulk semiconductor devices formed on a same bulk substrate

Isolated and bulk semiconductor devices formed on a same bulk substrate and methods to form such devices are described. For example, a semiconductor structure includes a first semiconductor device having a first semiconductor body disposed on a bulk substrate. The first semiconductor body has an upp...

Full description

Saved in:
Bibliographic Details
Main Authors Cappellani, Annalisa, Rios, Rafael, Gomez, Harry, Kuhn, Kelin J
Format Patent
LanguageEnglish
Published 22.05.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Isolated and bulk semiconductor devices formed on a same bulk substrate and methods to form such devices are described. For example, a semiconductor structure includes a first semiconductor device having a first semiconductor body disposed on a bulk substrate. The first semiconductor body has an uppermost surface with a first horizontal plane. The semiconductor structure also includes a second semiconductor device having a second semiconductor body disposed on an isolation pedestal. The isolation pedestal is disposed on the bulk substrate. The second semiconductor body has an uppermost surface with a second horizontal plane. The first and second horizontal planes are co-planar.
Bibliography:Application Number: US201615219138