Low resistive electrode for an extendable high-k metal gate stack

In one embodiment, a method of making a semiconductor device includes: forming a substrate; forming an nFET transistor and a pFET transistor on the substrate; wherein forming the nFET transistor comprises first depositing several first layers in and along the inner sidewalls of a trench on the subst...

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Bibliographic Details
Main Authors Wong, Keith Kwong Hon, Bao, Ruqiang
Format Patent
LanguageEnglish
Published 01.05.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In one embodiment, a method of making a semiconductor device includes: forming a substrate; forming an nFET transistor and a pFET transistor on the substrate; wherein forming the nFET transistor comprises first depositing several first layers in and along the inner sidewalls of a trench on the substrate, then depositing a conductive metal comprising cobalt on the several first layers; wherein forming the pFET transistor comprises first depositing several second layers in and along the inner sidewalls of a trench on the substrate, then depositing a conductive metal comprising cobalt on the several second layers.
Bibliography:Application Number: US201614993674