Self-aligned trench MOSFET and method of manufacture

• Main Authors: Chen, Kuo-In, Li, Jian, Terril, Kyle
• Format: Patent
• Language: English
• Published: 17.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of...