Self-aligned trench MOSFET and method of manufacture

• Main Authors: Chen, Kuo-In, Li, Jian, Terril, Kyle
• Format: Patent
• Language: English
• Published: 17.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region. The MOSFET also includes a plurality of body contact regions disposed in the each body region adjacent the plurality of source regions, a plurality of source/body contact spacers disposed between the plurality of gate insulator regions above the recessed mesas, a source/body contact disposed above the source/body contact spacers, and a plurality of source/body contact plugs disposed between the source/body contact spacers and coupling the source/body contact to the plurality of body contact regions and the plurality of source regions.