Semiconductor device structure and method for forming the same

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack over the semiconductor substrate. The first gate stack includes a first gate and a second gate over the first gate, and...

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Bibliographic Details
Main Authors Wu Cheng-Ming, Hsu Shih-Lu, Wang Chien-Hsian, Hsaio Ching-Yen
Format Patent
LanguageEnglish
Published 10.04.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack over the semiconductor substrate. The first gate stack includes a first gate and a second gate over the first gate, and the first gate and the second gate are electrically isolated from each other. The semiconductor device structure includes a ring structure surrounding the first gate stack. The ring structure is made of a conductive material.
Bibliography:Application Number: US201514832659