Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer
According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; intr...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
10.04.2018
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Subjects | |
Online Access | Get full text |
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Summary: | According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; introducing the etch plasma into the processing chamber to remove a native oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer; and, subsequently, depositing a dielectric layer directly on the surface of the semiconductor layer. |
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Bibliography: | Application Number: US201514724947 |