Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer

• Main Authors: Kahn Markus, Koch Philipp, Schmidt Gerhard, Steinbrenner Juergen, Maier Christian
• Format: Patent
• Language: English
• Published: 10.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; introducing the etch plasma into the processing chamber to remove a native oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer; and, subsequently, depositing a dielectric layer directly on the surface of the semiconductor layer.