High-power laser diode packaging method and laser diode module

In both aspects of the disclosure, a temperature of a p-n junction of the laser diode remains substantially constant within a 0 to 2° C. temperature range through a predetermined amount of several hundred of repeated thermo-cycles which is indicative of uncompromised integrity of the soft solder.

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Bibliographic Details
Main Authors Miftakhutdinov Dmitriy, Trubenko Pavel, Strougov Nikolai, Komissarov Alexey, Berishev Igor
Format Patent
LanguageEnglish
Published 03.04.2018
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Summary:In both aspects of the disclosure, a temperature of a p-n junction of the laser diode remains substantially constant within a 0 to 2° C. temperature range through a predetermined amount of several hundred of repeated thermo-cycles which is indicative of uncompromised integrity of the soft solder.
Bibliography:Application Number: US201615281443