Gate-all-around fin device

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type...

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Bibliographic Details
Main Authors Muhammad Mujahid, Mishra Rahul, Campi, Jr. John B, Gauthier, Jr. Robert J, Mitra Souvick
Format Patent
LanguageEnglish
Published 20.03.2018
Subjects
AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR
SHAPING OR JOINING OF PLASTICS
TRANSPORTING
WORKING OF PLASTICS
WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Summary:A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
Bibliography:Application Number: US201715474096