Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 μm that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride f...

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Bibliographic Details
Main Authors Yanagisawa Takuya, Yamamoto Yoshiyuki, Seki Yuki, Ishibashi Keiji, Uematsu Koji
Format Patent
LanguageEnglish
Published 20.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 μm that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film to a mean value mt of the thickness thereof is 0.01 or more and 0.5 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mo of the absolute value of the off angle is 0.005 or more and 0.6 or less.
Bibliography:Application Number: US201314767706