Structure for thermally assisted MRAM

A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer forme...

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Bibliographic Details
Main Authors Prejbeanu Lucian, Annunziata Anthony J, Trouilloud Philip L, Worledge Daniel C
Format Patent
LanguageEnglish
Published 13.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
TESTING
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Summary:A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.
Bibliography:Application Number: US201615347327